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Multicrystalline Silicon Solar Cells 150mm Sq Physical Charecteristic
Multicrystalline Silicon Solar Cells 150mm Sq
Physical Charecteristic
Type No : MUC 150
Material
Casted P type (Boron doped)
Silicon
Area
225.00 Sq Cm
Wafer
Multicrystalline Silicon Wafer
Thickness
250±25 micron
Base Resistivity
0.5 - 5.0 Ohm. Cm
Electrical Contacts
Front: Grid Structure, Screen
Surface Condition
As cut, Nitrade Passivated
Printed Silver Busbar, Width
Shape
Square
2.0mm, Back : Screen Printed
Size
150x150 ±0.5mm
AgAl Bus Bar 6.0 mm Width &
Al Back Surface Field
Electrical Parameters
Grades
Power
Output
(Pmax)
Range Watt
Measuring
Voltage(Vm)
Volts
Current at Vm
(0.475) Amps
Short Circuit
Current (Isc)
Amps
Oper Circuit
Current
(Voc) Volts
Conversion
Efficiency(n%)
Fill Factor
(%)
SG7
3.50-3.41
0.475
7.37-7.17
7.40
0.615
15.35
76
G01
3.40-3.31
0.475
7.16-6.96
7.33
0.610
14.91
75
G02
3.30-3.21
0.475
6.95-6.75
7.11
0.610
14.46
75
G03
3.20-3.11
0.475
6.74-6.54
7.10
0.600
14.02
74
G04
3.10-3.01
0.475
6.53-6.33
6.88
0.600
13.57
74
G05
3.00-2.91
0.475
6.32-6.12
6.86
0.590
13.13
73
G06
2.90-2.81
0.475
6.11-5.91
6.63
0.590
12.68
73
G07
2.80-2.71
0.475
5.90-5.70
6.60
0.580
12.24
72
G08
2.70-2.61
0.475
5.69-5.49
6.35
0.580
11.80
72
G09
2.60-2.51
0.475
5.48-5.28
6.11
0.570
11.35
71
G10
2.50-2.41
0.475
5.27-5.07
5.87
0.570
10.91
71
1. Listed Parameters are measured under standard test condition (1000 w/m2 air-mass 1.5 solar irradiance and 25ºC cell
temperature with 2% abosolute accuracy)
Tolerance on Electrical Specification is ±5%
2. All Solar cell are individually tested and grouped into the specified grades.
3. These are Nitrade Passivated Cells Multicrystalline Silicon Solar Cells 156mm Sq
Physical Charecteristic
Type No : MUC 156
Material
Casted P type (Boron doped)
Silicon
Area
243.36 Sq Cm
Wafer
Multicrystalline Silicon Wafer
Thickness
250±25 micron
Base Resistivity
0.5 - 5.0 Ohm. Cm
Electrical Contacts
Front: Grid Structure, Screen
Surface Condition
As cut, Nitrade Passivated
Printed Silver Busbar, Width
Shape
Square
2.0mm, Back : Screen Printed
Size
156x156 ±0.5mm
AgAl Bus Bar 6.0 mm Width &
Al Back Surface Field
Electrical Parameters
Grades
Power Output
(Pmax) Range
Watt
Measuring
Voltage(Vm)
Volts
Current at Vm
(0.475) Amps
Short Circuit
Current (Isc)
Amps
Oper Circuit
Current (Voc)
Volts
Conversion
Efficiency(n%)
Fill Factor (%)
SG5
3.70-3.61
0.475
7.77-7.60
7.81
0.615
15.00
76
SG6
3.60-3.51
0.475
7.59-7.38
7.60
0.615
14.60
76
SG7
3.50-3.41
0.475
7.37-7.17
7.40
0.615
14.19
76
G01
3.40-3.31
0.475
7.16-6.96
7.33
0.610
13.78
75
G02
3.30-3.21
0.475
6.95-6.75
7.11
0.610
13.37
75
G03
3.20-3.11
0.475
6.74-6.54
7.10
0.600
12.96
74
G04
3.10-3.01
0.475
6.53-6.33
6.88
0.600
12.55
74
G05
3.00-2.91
0.475
6.32-6.12
6.86
0.590
12.14
73
G06
2.90-2.81
0.475
6.11-5.91
6.63
0.590
11.73
73
G07
2.80-2.71
0.475
5.90-5.70
6.60
0.580
11.32
72
G08
2.70-2.61
0.475
5.69-5.49
6.35
0.580
10.90
72
G09
2.60-2.51
0.475
5.48-5.28
6.11
0.570
10.49
71
G10
2.50-2.41
0.475
5.27-5.07
5.87
0.570
10.08
71
1. Listed Parameters are measured under standard test condition (1000 w/m2 air-mass 1.5 solar irradiance and 25ºC cell temperature with 2%
abosolute accuracy)
Tolerance on Electrical Specification is ±5%
2. All Solar cell are individually tested and grouped into the specified grades.
3. These are Nitrade Passivated Cells Multicrystalline Silicon Solar Cells 125mm Sq
Physical Charecteristic
Type No : MUC 125
Material
Casted, P type (Boron doped) Silicon
Area
156.25 Sq, cm
Wafer
Multicrystalline Silicon Wafer
Thickness
325±25 microns
Base Resistivity
0.5 - 5.0 Ohm. cm
Electrical Contacts
Front: Grid Structure, Screen
Surface Condition
As cut, Nitrade Passivated
Printed Silver Busbar, Width:
Shape
Square
1.5mm, Back : Screen Printed
Size
125x125 ±0.5mm
Ag Al Busbar 5.5 mm Width and
Al. Back Surface Field
Electrical Parameters
Grades
Power output
(Pmax)
Range
Measuring Voltage
(Vm)
Current at Vm
(0.460V)
Short Circuit
Current (Isc)
Open circuit
Voltage
(Voc)
Conv.
Efficiency
(n) %
Fill Factor (FF)
Watt
Volts
Amp
Amp
Volt
G01
2.15-2.11
0.46
4.67-4.57
4.66
0.61
13.63
0.75
G02
2.10-2.06
0.46
4.56-4.46
4.55
0.61
13.34
0.75
G03
2.05-2.01
0.46
4.45-4.35
4.57
0.60
13.00
0.74
G04
2.00-1.96
0.46
4.34-4.25
4.46
0.60
12.67
0.74
G05
1.95-1.91
0.46
4.24-4.14
4.48
0.59
12.35
0.73
G06
1.90-1.81
0.46
4.13-3.92
4.31
0.59
11.87
0.73
G07
1.80-1.71
0.46
3.91-3.70
4.2
0.58
11.23
0.72
G08
1.70-1.61
0.46
3.69-3.48
3.96
0.58
10.59
0.72
G09
1.60-1.51
0.46
3.47-3.27
3.78
0.57
10.00
0.71
G10
1.50-1.41
0.46
3.26-3.06
3.54
0.57
9.31
0.71
Note:
1. Listed parameters are measured under standard test conditions (1000W/m2 air-mass 1.5 solar irradiance and 25 deg. C cell temperature with 2%
absolute accuracy). Tolerance on electrical specification is +/- 5%
2. All Solar cells are individually tested and grouped into the specified grades.
3. Suitability : a) G01 & G02 are suitable for 75Wp -80Wp Modules. Using Toughened Glass with total transmissivity
>
91%
b) G03, Grade Cells are suitable for 74Wp, 37Wp Modules. G05 are suitable for 70Wp/ 35Wp Modules.
Using Toughened Glass with total transmissivity
>
91%
4. These are Nitride passivated cells.