Bristol, United Kingdom Space and Terrestrial Environments
Chair: Janet Barth, NASA/GSFC, Greenbelt, MD Radiation Effects in Devices and Integrated Circuits
Chair: Ray Ladbury, NASA/GSFC, Greenbelt, MD Single-Event Effect; Devices and Integrated Circuits
Chair: Philippe Paillet, CEA/DIF, Bruyères-le-Chatel, France Dosimetry and Facilities
Chair: Henry Clark, Texas A&M University, College Station, TX Hardening By Design
Chair: Nathan Nowlin, Sandia National Laboratories, Albuquerque, NM Photonic Devices and Integrated Circuits
Chair: Scott Messenger, Naval Research Laboratory, Washington, DC
The Technical Program Committee
had its hands full with the large num-
ber of summary submissions. This
enthusiastic response is indicative
of strong support by the worldwide
radiation effects community. I am
confident you will find this a useful
conference and look forward to meet-
ing you in Tucson.
Nick van Vonno, Consultant/Intersil
Technical Program Chairman
POSTER SESSION
RADIATION EFFECTS
DATA WORkSHOP
INVITED SPEAkERS
LATE-NEWS PAPERS
Papers that are more effectively presented visually with group discussion will be
displayed in the Poster Session Tuesday afternoon through Friday morning in the
Arizona Ballrooms 1 5. The formal Poster Session will run from 2:30 4:30 PM,
Wednesday, and authors will be available to discuss their work. The Poster Session
chair is Jeff Titus of NAVSEA/Crane, Crane, IN.
Papers in the Workshop are intended to provide radiation response data to scientists
and engineers who use electronic and photonic devices and circuits in a radiation
environment and to designers of radiation-hardened systems. Workshop posters can
be viewed Tuesday afternoon through Friday morning in the Arizona Ballrooms 8 12.
Authors will be available to discuss their work during the formal Data Workshop ses-
sion, 2:30 4:30 PM, Thursday, in the Arizona Ballrooms 8 12. A copy of the Data
Workshop Record will be mailed to all registered attendees after the Conference. The
Data Workshop chair is Jim Felix of Sandia National Laboratories, Albuquerque, NM.
James E. Turner, Community Outreach Historian for the Arizona Historical Society
will present The Francisco Vásquez de Coronado Expedition, Martin G. Tomasko
of the University of Arizona and Principal Investigator for the Descent Imager/
Spectral Radiometer (DISR) instrument on the Huygens entry probe will speak on
The Huygens Mission to Titan, and Ann Garrison Darrin, member of the Principal
Professional Staff and Group Manager in the Research Center of the Johns Hopkins
University Applied Physics Laboratory will be speaking on Small Stuff in Space:
From Micro and Nano Technologies to Space Debris.
A limited number of late news papers will be accepted and included in the Poster
Session and the Radiation Effects Data Workshop. The deadline for submission is 1
June 2008. Detailed instructions for submitting a late-news summary to the Technical
Program Committee are available on the NSREC Web site at www.nsrec.com. 10
Technical Program Tuesday
Technical Program Tuesday
ARIZONA BALLROOMS 6 7
8:30 AM
8:35 AM
9:05 AM
SESSION A
9:10 AM
A-1
9:15 AM
A-2
9:30 AM
A-3
9:45 AM
A-4
10:00 AM
OPENING REMARkS
Paul Dodd, Sandia National Laboratories, General Chairman
AWARDS PRESENTATION
Tim Oldham, NASA/GSFC, Radiation Effects Steering Group Chairman
TECHNICAL SESSION OPENING REMARkS
Nick van Vonno, Consultant/Intersil, Technical Program Chairman
SINGLE-EVENT EFFECTS: MECHANISMS AND MODELING
SESSION INTRODUCTION
Chair: Dale McMorrow, Naval Research Laboratory
Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect
in Inverter Chains with Focused Pulsed Laser Irradiation
V. Ferlet-Cavrois, P. Paillet, J. Baggio, CEA/DIF; D. McMorrow, J. S. Melinger, NRL
Single event transients are measured in inverter chains. The PIPB effect is analyzed
with pulsed laser irradiation and with electrical measurements. The PIPB is induced
by floating body charging in both NMOS and PMOS transistors.
Generation and Propagation of Single Event Transients in 0 .18 um Fully
Depleted SOI
Pascale Gouker, Jim Brandt, Peter Wyatt, Brian Tyrrell, Tony Soares, Jeff Knecht,
Craig Keast, MIT Lincoln Laboratory; Dale McMorrow, Naval Research Laboratory;
Balaji Narasimham, Matthew Gadlage, Barat Bhuva, Vanderbilt University
Single event transients were characterized experimentally in fast logic circuits fabri-
cated in 0.18 um FDSOI CMOS process using laser-probing techniques. We show that
the transient pulse widens as it propagates; the widening is eliminated by the body
contact.
Single-Event Transient Pulse Propagation in Digital CMOS
Lloyd W. Massengill, Vanderbilt University
Propagation characteristics of SET pulses in CMOS logic are derived via closed-form
circuit analysis. Recently-observed SET signatures and technology scaling effects are
explained in terms of basic technology and circuit design parameters.
Waveform Observation of Digital Single-Event Transients Employing
Monitoring Transistor Technique
D. Kobayashi, K. Hirose, H. Ikeda, Institute of Space and Astronautical Science, JAXA
and Graduate University for Advanced Studies; Y. Yanagawa, University of Tokyo;
H. Saito, Institute of Space and Astronautical Science, JAXA and University of Tokyo;
V. Ferlet-Cavrois, P. Paillet, CEA/DIF; D. McMorrow, Naval Research Laboratory; Y. Arai,
KEK and Graduate University for Advanced Studies; M. Ohno, OKI Electric Industry
Digital single-event transients can be observed by adding two transistors to a target
logic-gate. They work for monitoring voltage-transients through their drain-currents
observed with the conventional technique for measuring radiation-induced transient-
currents in dc-biased single transistors. 11
Technical Program Tuesday
Technical Program Tuesday
10:15 10:45 AM
TUCSON BALLROOM
A-5
10:45 AM
A-6
11:00 AM
A-7
11:15 AM
A-8
11:30 AM
A-9
11:45 AM
BREAK
Device-Orientation Effects on Multiple-Bit upset in 65-nm SRAMs
Alan D. Tipton, Jonathan A. Pellish, John M. Hutson, Marcus Mendenhall, Robert A. Reed,
Ronald D. Schrimpf, Robert A. Weller, Vanderbilt University; Robert Baumann, Xiaowei
Deng, Andrew Marshall, Texas Instruments; Michael A. Xapsos, Ken LaBel, NASA/GSFC;
Hak Kim, Mark Friendlich, Michael Campola, Christina Seidleck, MEI Technology Inc.,
NASA/GSFC
The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in
65 nm SRAMs are examined. For low LET ions, the cross section varies by two orders
of magnitude with the orientation.
Integrating Circuit Level Simulation and Monte-Carlo Radiation
Transport Code for Single Event upset Analysis in SEu Hardened
Circuitry
Kevin M. Warren, Andrew Sternberg, ISDE Vanderbilt University; Robert Weller, Lloyd
Massengill, Robert Reed, Ron Schrimpf, Vanderbilt University; Mark Baze, Boeing SSED
Monte-Carlo radiation transport code is coupled with circuit level simulation to
identify regions of single event upset vulnerability in a SEU hardened flip-flop,
as well as to predict single event upset cross sections under static and dynamic
operating conditions.
Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal
Memory Cell
Andrea Cester, Nicola Wrachien, Università di Padova; J. Schwank, G. Vizkelethy, Sandia
National Laboratories; R. Portoghese, C. Gerardi, ST Microelectronics
We present the first charge loss model on nonvolatile nanocrystal memories. It pre-
dicts the threshold voltage dependence on the ion hit number and position. It also
provides an estimation of the ion hit track size.
Vulnerable Trench Power MOSFETs under Heavy Ion Irradiation
Sandra Liu, Max Zafrani, Huy Cao, Robert Berberian, Christopher DiCienzo, Milt Boden,
International Rectifier
SEE test results show trench MOSFETs are very vulnerable to heavy ion irradiation.
This paper explains that trench structure is responsible for its vulnerability and a new
SEE failure mode of power MOSFET is identified.
Direct Evidence of Secondary Events Induced by High Energy Protons
Giorgio Cellere, Alessandro Paccagnella, DEI, Università di Padova; Angelo Visconti, Silvia
Beltrami, ST Microelectronics; Jim Schwank, Marty Shaneyfelt, Sandia National Laboratories;
Philippe Paillet, Véronique Ferlet-Cavrois, Jacques Baggio, CEA/DIF; Ewart Blackmore,
TRIUMF
35-500 MeV protons result in both TID effects and a few SEE events, deriving from
single secondary particles generated by the high energy protons. We study and quan-
titatively model these effects using FG memories. 12
Technical Program Tuesday
Technical Program Tuesday
A-10
12:00 PM
POSTER PAPERS
PA-1
PA-2
PA-3
PA-4
SET Sensitive Volume Imaging and Measurement with Two-Photon
Absorption Laser Testing
P. Jaulent, V. Pouget, P. Fouillat, IMS; D. McMorrow, NRL; F. Bezerra, CNES
The TPA laser technique is used for the first time to image in 3D and measure the SET
sensitive volume of linear devices. Influence of experimental parameters and conse-
quences for rate prediction accuracy are discussed.
LET Dependence of Single Event Transient Pulse-Widths in SOI Logic
Cell
Takahiro Makino, The Graduate University for Advanced Studies; Daisuke Kobayashi,
Kazuyuki Hirose, The Graduate University for Advanced Studies, and Institute of Space and
Astronautical Science; Yoshimitsu Yanagawa, University of Tokyo; Hirobumi Saito, Institute
of Space and Astronautical Science, and University of Tokyo; Daisuke Takahashi, Shigeru
Ishii, Masaki Kusano, Mitsubishi Heavy Industries, Ltd.; Shinobu Onoda, Toshio Hirao,
Takeshi Ohshima, JAEA
SET pulse-widths were measured as a function of LET by using pulse capture circuits
and were simulated with mixed-mode 3-D device simulations. We found that the car-
rier recombination process dominates LET dependence of SET pulse-widths.
Examples