SINGLE CRYSTAL SAPPHIRE SINGLE CRYSTAL SAPPHIRE
Single Crystal Sapphire is playing an ever-increasingly important role as a material for, high reliablility Electronics today due to its excellent mechanical characteristics, chemical stability and light transmission. Kyocera mass-produces Single Crystal Sapphire in a vertically integrated manner. From "pulling up" the raw material with EFG (Edge-Defined Film-Fed Growth) methods to machining, Kyocera produces and supplies various products with large diameters or specific shape requirements.
Pull-Up Direction
Sapphire Ribbon Crystal Die for Crystal Growth FEATURES OF EFG METHOD
Large Size Material
Sizing-up of materials allows for a broader range of applications and uses. Crucible Melt Supply Slit Heating Coil Alumina Melt Production of Single Crystal Sapphire in Any Desired Sectional Shape
Since any desired sectional shape can be obtained in the form of ribbons, tubes, rods, and others, cutting processes can be eliminated, allowing for a reduction in cost. Control of Crystal Orientation
Any axis and plane can be produced by instituting proper control during crystal growth.
1 EFG Method CONTENTS FEATURES OF EFG METHOD ·········································P1 FEATURES OF SINGLE CRYSTAL SAPPHIRE···················P2 SAPPHIRE MANUFACTURING PROCESS·························P3 CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE·····P4 SAPPHIRE PRODUCTS············································P5 P6 FEATURES OF SINGLE CRYSTAL SAPPHIRE
C Axis a3 C plane High Strength, High Rigidity, High Anti-Abrasion, High Anti-Heat, High AntiCorrosion Characteristics, and High Anti-Plasma Characteristics.
a2 Because of these characteristics, Single Crystal Sapphire is widely used for precision mechanical parts. Stable Dielectric Constant, Very Low Dielectric Loss, Good Electrical Insulation
a1
A plane Single Crystal Sapphire is used as a material for substrates in super-high frequency regions. It is also used as an insulation material and microwave window. Single Crystal Sapphire has become indispensable in the Electronics Industries. Excellent Light Transmission
R plane 1102 A plane 1120 C plane 0001 Typical Orientation R plane Single Crystal Sapphire is used for various kinds of vacuum equipment, windows in reaction furnace, scanner windows and caps for optical communication due to its excellent mechanical characteristics and heat resistance. Good Thermal Conductivity and High Heat Resistance Excellent thermal conductivity at low temperatures allows Single Crystal Sapphire as a transparent material to be used in many diverse fields requiring thermal conduction and heat radiation.
2 Unit Cell of Sapphire SAPPHIRE MANUFACTURING PROCESS
Sapphire Manufacturing Process
Growth of Raw Material Shape and Specifications Substrate
Dimensions Crystal Orientation (unit: mm) Rod
Dimensions Crystal Orientation Width 200max. Leugth 300max. Thickness0.1 20 R plane A plane C plane 2deg 2deg 2deg Diameter 0.5 20 Length 1,000max. Grinding Tube
Dimensions Crystal Orientation Others
Dimensions Crystal Orientation Inner Diameter 1.3 50 Tube Thickness 0.25 5 Length:1,000mm max. Lapping Shapes other than above are available. As-Grown Materials Polishing Å 3 CHARACTERISTICS OF SINGLE CRYSTAL SAPPHIRE
Coefficient of Linear Thermal Expansion 10 6/K Characteristics of Kyocera's Single Crystal Sapphire
Hexagonal System a 4.763Å
Crystallographic Structure 10.0 8.0 6.0 4.0 2.0 0
Par alle l A to C cul xis Axi s 50 40 30 20 10 0
K Thermal Couductivity W/m
tan c 13.003Å Mechanical Characteristics Rhombohedral Single crystal Reference Density Vickers Hardness Flexural Strength Tensile Strength 3.97 103kg/m3 22.5GPa HV1 Load 9.807N 690MPa 2250MPa Diameter0.25mm Filament 25 pe Per ndi oC ar t 100 100 300 500 700 900 1100 1300 1500 1700
Temperature( C) Fig. 1 Thermal Expansion vs. Temperature Compressive Strength 2,940MPa Young's Modulus Temperature( C) Fig. 2 Thermal Conductivity vs. Temperature 100 300 500 700 900 1100 1300 1500 1700 470GPa 0.18 0.29
Dielectric Constant 16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 100 300 500 700 900 1100 1300 0 102 103 104 105 106 107 108 109 1010
Frequency Fig. 4 Dielectric Loss vs. Frequency
eu Perp dicula Poisson's Ratio Thermal Characteristics Melting Point 2,053 0.003
al Par lel t oC Axis 40 400 C parallel to Caxis 7.7 10-6/ Coefficient of Linear Thermal Expansion 40 400 C perpendicular 7.0 10-6/ to Caxis
Thermal Conductivity Specific Heat Emittance Dielectric strength Volume Resistance 0.002 20 42W/ m k t to C Axis 0.001 0.75 103J/ kg K 0.02 2.6 3.7 m880 48 106V/m 20 500 1014 1011 cm cm
External Transmission % Temperature( C) Fig. 3 Dielectric Constant vs. Temperature Electrical Charactdristics 100 Dielectric Constant Dielectric Loss Angle Loss Factor Dielectric Loss Tangent Index of Reflection Optical Transmission C parallel to Caxis 11.5 1MHz C perpendicular 9.3 1MHz to Caxis 1 10-4 10-4 10-4 No 1.768 Ne 1.760
@589nm 80 1MHz 60 40 Optical Characteristics 20 0 These figures are representative. Each Crystal Orientation has different characteristics. 0.1 0.15 0.2 Standard Dimensional Tolerance
Nominal Dimension Tolerance 1 a 0.05 1 a 0.1 4 4 a 25 0.2 25 a 0.25
0.25. Wave Length( m) Fig. 5 Transmission vs. Wave Length NOTE: ·Transmittance range varies depending on thickness of Sapphire Products. ·Interfacial Reflection included ·Thickness 1mm. 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 3.0 4.0 5.0 6.0 mm 102 102 a 190 0.5 190 1 a Machining accuracy: Tube 1.A.10.A.and standard tube thickness tolerance Hole diameter and standard pitch tolerance 0.1 4 SAPPHIRE PRODUCTS
Substrate
Application
(1)High Brightness LED (2)HB-LED Semiconductor, Piezoelectric Semiconductor, Superconductor, Thin Film Substrate. (3)MR Sensor, Precision Resistor (4)Optical Devices (5)Thin Film HIC Single Crystal Sapphire is widely used substrate material for blue, green, ultraviolet and white LEDs. It has excellent features as a base substrate for GaN deposition and great mass-productivity. In addition, it can meet future larger-size demand. Single Crystal Sapphire is used as a base substrate in thin film deposition because of its lattice alignment match with a variety of semiconductor materials combined with excellent thermal and chemical stability. 2"-8" substrate for Optical Devices Standard Dimension and Tolerance
Size 8 6 5 4 3 2 200 0.25 0.725 0.05 150 0.25 125 0.25 100 0.25 0.625 0.05 0.625 0.05 0.53 0.05 0.05 0.05 O.F. Length 55 60 45 50 40 45 30 35 19 25 13 19 Application Examples 76.2 0.25 0.43 50.8 0.25 0.33 Specifications other than above are available. Available sizes are dependent on a crystal orientation. Sizes and tolerances other than the above table are also available under customer requirements. Please contact or send your requirements to Kyocera. Semiconductor Process Equipment Parts
Application (1)Carrier Plate (2)Microwave Entrance Tube (3)Dummy Water (4)Handling Arm (5)Vacuum Chuck (6)Window It is used as various Semiconductor Process Equipment due to its high anti-plasma and high anti-heat characteristics.
1 2 3 4 5 Optical Products for LCD Projectors
Application
1 Sapphire Plate Polarizing Film Attached Holder Assembled Dichroic Filter 2 LCD Projector Dust Control Plate Sapphire material realizes high brightness and high picture quality for LCD projectors due to its high thermal conductivity and optical properties. Coating such as Dichroic Filter, to prevent reflection features is available. Standard sizes to fit in various LCD panels are available.
JP Patent No. 3091183, No.3443549 U.S. Patent No. 6577375, No.6642989 Selected Transmission Layer for Wave Length Optical Transmission
Transmission(%)
100 80 60 40 20 0 400 450 500 550 600 650 700 750 800 AR Coat External Transmission
Transmission(%)
100 Red Both-sides AR coating 95 Blue Green 90 85 One-side AR coating Non coating Multi coating 80 400 425 450 475 500 525 550 575 600 625 650 675 700 Wave length(nm) Wave length(nm) (475nm Target Characteristic values are subjected to change due to each specs or conditions. Optical Products Others Application
(1)POS Scanner Window (SOG) (2)Window (3)Cap for Optical Communication (4)Infrared Measuring Device Window (5)Coin Sensor (6)Lamp External Tube High Pressure Sodium, Xenon, Ultra Pressure mercury Metallic Halide (7)Light Receiving Window Accelerating Tube Application
(1)Fiber Bar Guide (2)Insulating Plate and Rod (3)Single Crystal Material Sheel Holder (4)Biomaterial (BIOCERAM R ) (5)Watch Window (6)NMR Protection Tube (7)Thermocouple Protection Tube (8)HDC Resonator Rod 6  KYOCERA Corporation Corporate Fine Ceramics Group 6 Takeda Tobadono-cho, Fushimi-ku, Kyoto 612-8501, Japan Tel: +81-(0)75-604-3441 Fax +81-(0)75-604-3440 KYOCERA Industrial Ceramics Corporation TX 11044 Research Blvd, SuiteA-430 Austin TX 78759 Tel: +1-512-336-1725 Fax: +1-512-336-8189 MA 24 Prime Parkway Natick MA 01760 Tel: +1-508-651-3922 Fax: +1-508-650-0625 IL 25 NW Point Blvd., #660 Elk Grove Village lL 60007 Tel: +1-847-981-9494 Fax: +1-847-981-9495 NC 100 Industrial Prk. Rd. Mountain Home NC 28758 Tel: +1-828-693-0241 Fax: +1-828-692-1340 NJ 220 Davidson Avenue, Suite 104 Somerset, NJ 08873 Tel: +1-732-563-4336 Fax: +1-732-627-9594 CA 8611 Balboa Avenue San Diego, CA 92123 Tel: +1-858-614-2511 Fax: +1-858-715-0871 CA 472 Kato Terrace Freemont, CA 94539 Tel: +1-510-257-0200 Fax: +1-510-257-0125 WA 5713 East Fourth Plain Blvd. Vancouver WA 98661 Tel: +1-360-696-8950 Fax: +1-360-696-9804 KYOCERA Asia Pacific, Ltd. Hong Kong Room 801-802, Tower 1, South Seas Centre, 75 Mody Road, Tsimshatsui East, Kowloon, Hong Kong Tel: +852-(0)2723-7183 Fax: +852-(0)2724-4501 Singapore 298 Tiong Bahru Road, #13-03/05 Central Plaza, Singapore 168730 Tel: +65-6271-0500 Fax: +65-6271-0600 Taiwan 10FL.,No.66, Nanking West Road, Taipei, Taiwan, Tel: +886-(0)2-2555-3609 Fax: +886-(0)2-2559-4131/4123 Thailand 159 Serm-MIT Tower, 19th Floor, Sukhumvit 21 Road, Wattana, Bangkok 10110 Thailand. Tel: +66-(0)2 661-6400 Fax: +66-(0)2 661-6413 KYOCERA Fineceramics GmbH Hammfeldamm 6 41460 Neuss, Germany Tel: +49-(0)2131-16370 Fax: +49-(0)2131-1637150 KYOCERA Fineceramics Ltd. Admiral House, Harlington Way, FLEET,Hampshire, GU13 8BB. Tel: +44-(0)1252-776000 Fax: +44-(0)1252-776010 KYOCERA Fineceramics S.A.S 1, Rue Corbusier, SILIC 326, F-94598 Rungis CEDEX, France Tel: +33-(0)1-45120220 Fax: +33-(0)1-46860133
http://www.kyocera.co.jp KYOCERA (TianJin) Sales&Trading Corporation Shanghai Branch FineCeramic Sales Dept Information Tower 11th Floor, 211 Century Avenue, Pudong New Area Shanghai P.R China Post code;200120 Tel: +86-(0)21-5877-5366 Fax: +86-(0)21-6876-4935 KYOCERA Korea Co., Ltd. Diplomatic Center Room#406, 1376-1, Seocho-2Dong, Seocho-Gu, Seoul, 137-072 Korea Tel: +82-2-3463-3538 Fax: +82-2-3463-3539
C 2007 KYOCERA CORPORATION
006/002/0710 Printed in Japan 006997