ize=-1 color=black> Below is a cache of http://info.hobbyengineering.com/specs/STLINEAR-TEA2025.pdf. It's a snapshot of the page taken as our search engine crawled the Web.
The web site itself may have changed. You can check the current page or check for previous versions at the Internet Archive. Yahoo! is not affiliated with the authors of this page or responsible for its content.
STEREO AUDIO AMPLIFIER TEA2025B
TEA2025D
STEREO AUDIO AMPLIFIER
DUAL OR BRIDGE CONNECTION MODES
FEW EXTERNAL COMPONENTS
SUPPLY VOLTAGE DOWN TO 3V
HIGH CHANNEL SEPARATION
VERY LOW SWITCH ON/OFF NOISE
MAX GAIN OF 45dB WITH ADJUST EXTER-
NAL RESISTOR
SOFT CLIPPING
THERMAL PROTECTION
3V < V
CC
< 15V
P = 2 1W, V
CC
= 6V, R
L
= 4
P = 2 2.3W, V
CC
= 9V, R
L
= 4
P = 2 0.1W, V
CC
= 3V, R
L
= 4
DESCRIPTION
The TEA2025B/D is a monolithic integrated circuit
in 12+2+2 Powerdip and 12+4+4 SO, intended for
use as dual or bridge power audio amplifier port-
able radio cassette players.
June 1994
Symbol
Parameter
Test Conditions
Unit
V
S
Supply Voltage
15
V
I
O
Ouput Peak Current
1.5
A
T
J
Junction Temperature
150
°C
T
stg
Storage Temperature
150
°C
ABSOLUTE MAXIMUM RATINGS
DECOUPLING
1
1
-
+
2
-
+
2
THERMAL
PROTECT.
START
CIRCUIT
10K 10K 50 50 5K 50 SVR
IN 2+
FEED
GND
GND
BOOT 2
OUT 2
BRIDGE
VS+
OUT 1
BOOT 1
GND
GND
FEED
IN 1+
GND(Sub)
D94AU120
BLOCK DIAGRAM
POWERDIP 12+2+2 SO20 (12+4+4)
ORDERING NUMBERS: TEA2025B (PDIP)
TEA2025D (SO)
1/9 BRIDGE
OUT.2
BOOT.2
GND
GND
FEEDBACK
IN.2 (+)
SVR
+Vs
OUT.1
BOOT.1
GND
GND
FEEDBACK
IN.1 (+)
GND (sub.)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
POWERDIP 12+2+2 PIN CONNECTION (Top view)
BRIDGE
OUT 2
BOOT 2
GND
GND
GND
GND
FEEDBACK
IN 2(+)
1
3
2
4
5
6
7
8
9
IN 1(+)
FEEDBACK
GND
GND
GND
GND
BOOT 1
OUT 1
V
CC
20
19
18
17
16
14
15
13
12
D94AU119
SVR
10
GND(Sub)
11
SO 12+4+4 PIN CONNECTION (Top view)
Symbol
Description
SO 12+4+4 (*)
PDIP 12+2+2 (**)
Unit
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
15
65
15
60
°
C/W
°
C/W
(*) The R
th j-amb
is measured with 4sq cm copper area heatsink
(**) The R
th j-amb
is measured on devices bonded on a 10 x 5 x 0.15cm glass-epoxy substrate with a 35
µ
m thick copper surface of 5 cm
2.
THERMAL DATA
TEA2025B - TEA2025D
2/9 ELECTRICAL CHARACTERISTICS (T
amb
= 25
°
C, V
CC
= 9V, Stereo unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
S
Supply Voltage
3
12
V
I
Q
Quiescent Current
35
50
mA
V
O
Quiescent Output Voltage
4.5
V
A
V
Voltage Gain
Stereo
Bridge
43
49
45
51
47
53
dB A
V
Voltage Gain Difference
±
1
dB
R
j
Input Impedance
30
K PO
Output Power (d = 10%)
Stereo 8 (per channel)
9V
9V
6V
6V
6V
6V
3V
3V
12V
4 8 4 8 16 32 4 32 8 1.7
0.7
2.3
1.3
1
0.6
0.25
0.13
0.1
0.02
2.4
W
Bridge
9V
6V
6V
3V
3V
8 4 8 16 32 4.7
2.8
1.5
0.18
0.06
W
d
Distortion
Vs = 9V; R
L
= 4
Stereo
Bridge
0.3
0.5
1.5
%
SVR
Supply Voltage Rejection
f = 100Hz, V
R
= 0.5V, R
g
= 0
40
46
dB
E
N
(
IN
)
Input Noise Voltage
R
G
= 0
R
G
= 10 4 1.5
3
3
6
mV
CT
Cross-Talk
f = 1KHz, R
g
= 10K 40
52
dB
Term. N
°
(PDIP)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
DC VOLT (V)
0.04
4.5
8.9
0
0
0.6
0.04
8.5
0
0.04
0.6
0
0
8.9
4.5
9
Figure 1: Bridge Application (Powerdip)
Figure 2: Stereo Application (Powerdip)
C6
C4
C8
C5
C7
C9
C2
C11
C3
C1
C10
TEA2025B - TEA2025D
3/9 10
20
30
40
50
3
6
9
12
15
I(mA)
Vs(V)
STEREO
Figure 3: Supply Current vs. Supply Voltage
(R
L
= 4 )
0
0.5
1
1.5
2
2.5
3
3.5
3
6
9
12
15
Po(W)
Vs(V)
STEREO
Rl=4ohm
Rl=8ohm
Rl=16ohm
Figure 5: Output Power vs. Supply Voltage
(THD = 10%, f = 1KHz)
0.1
1
10
0
0.2
0.4
0.6
0.8
1
THD(%)
Po(W)
STEREO
Rl=4 OHM
Rl=16ohm
Rl=8ohm
Figure 6: THD versus Output Power
(f = 1KHz, V
S
= 6V)
0
1
2
3
4
5
6
7
8
3
6
9
12
15
Vo(V)
Vs(V)
Vs(V)
STEREO
Figure 4: Output Voltage vs. Supply Voltage
TEA2025B - TEA2025D
4/9 APPLICATION INFORMATION
Input Capacitor
Input capacitor is PNP type allowing source to be
referenced to ground.
In this way no input coupling capacitor is required.
However, a series capacitor (0.22 uF)to the input
side can be useful in case of noise due to variable
resistor contact.

Bootstrap
The bootstrap connection allows to increase the
output swing.
The suggested value for the bootstrap capacitors
(100uF) avoids a reduction of the output signal
also at low frequencies and low supply voltages.
Voltage Gain Adjust
STEREO MODE
The voltage gain is determined by on-chip resis-
tors R1 and R2 together with the external RfC1
series connected between pin 6 (11) and ground.
The frequency response is given approximated
by:
V
OUT
V
IN

=

R1
Rf
+
R2
+

1
JWC1
With Rf=0, C1=100 uF, the gain results 46 dB
with pole at f=32 Hz.
THE purpose of Rf is to reduce the gain. It is rec-
ommended to not reduce it under 36 dB.
BRIDGE MODE
The bridge configuration is realized very easily
thanks to an internal voltage divider which pro-
vides (at pin 1) the CH 1 output signal after reduc-
tion. It is enough to connect pin 6 (inverting input
of CH 2) with a capacitor to pin 1 and to connect
to ground the pin 7.
The total gain of the bridge is given by:
V
OUT
V
IN

=

R1
Rf
+
R2
+

1
JWC1

(
1
+
R3
R4
R1
R2
+
R4
+

1
JWC1
)
and with the suggested values (C1 = C2 = 100
µ
F,
Rf= 0) means:
Gv = 52 dB
with first pole at f = 32 Hz
Output Capacitors.
The low cut off frequency due to output capacitor
depending on the load is given by:
F
L

=

1
2 C
OUT

R
L
with C
OUT
470
µ
F and R
L
= 4 ohm it means F
L
=
80 Hz.
Pop Noise
Most amplifiers similar to TEA 2025B need exter-
nal resistors between DC outputs and ground in
order to optimize the pop on/off performance and
crossover distortion.
The TEA 2025B solution allows to save compo-
nents because of such resistors (800 ohm)are in-
cluded into the chip.
Figure 7
Figure 8
Figure 9
TEA2025B - TEA2025D
5/9 Stability
A good layout is recommended in order to avoid
oscillations.
Generally the designer must pay attention on the
following points:
- Short wires of components and short connec-
tions.
- No ground loops.
- Bypass of supply voltage with capacitors as
nearest as possible to the supply I.C.pin.The
low value(poliester)capacitors must have
good temperature and frequency charac-
teristics.
- No sockets.
2) the heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
There is no device damage in the case of ex-
cessive junction temperature: all that happens
is that P
O
(and therefore P
tot
) and Id are re-
duced.
APPLICATION SUGGESTION
The recommended values of the components are
those shown on stereo application circuit of
Fig. 2 different values can be used, the follow-
ing table can help the designer.
COMPONENT
RECOMMENDED
VALUE
PURPOSE
LARGER THAN
SMALLER THAN
C1,C2
0.22
µ
F
INPUT DC
DECOUPLING IN
CASE OF SLIDER
CONTACT NOISE OF
VARIABLE
RESISTOR
C3
100
µ
F
RIPPLE REJECTON
DEGRADATION OF
SVR, INCREASE OF
THD AT LOW
FREQUENCY AND
LOW VOLTAGE
C4,C5
100
µ
F
BOOTSTRAP
C6,C7
470
µ
F
OUTPUT DC
DECOUPLING
INCREASE OF LOW
FREQUENCY CUT-
OFF
C8,C9
0.15
µ
F
FREQUENCY
STABILITY
DANGER OF
OSCILLATIONS
C10, C11
100
µ
F
INVERTING INPUT
DC DECOUPLING
INCREASE OF LOW
FREQUENCY CUT-
OFF
TEA2025B - TEA2025D
6/9 SO20 PACKAGE MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.65
0.104
a1
0.1
0.3
0.004
0.012
a2
2.45
0.096
b
0.35
0.49
0.014
0.019
b1
0.23
0.32
0.009
0.013
C
0.5
0.020
c1
45 (typ.)
D
12.6
13.0
0.496
0.512
E
10
10.65
0.394
0.419
e
1.27
0.050
e3
11.43
0.450
F
7.4
7.6
0.291
0.299
L
0.5
1.27
0.020
0.050
M
0.75
0.030
S
8 (max.)
TEA2025B - TEA2025D
7/9 DIP16 PACKAGE MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a1
0.51
0.020
B
0.85
1.40
0.033
0.055
b
0.50
0.020
b1
0.38
0.50
0.015
0.020
D
20.0
0.787
E
8.80
0.346
e
2.54
0.100
e3
17.78
0.700
F
7.10
0.280
I
5.10
0.201
L
3.30
0.130
Z
1.27
0.050
TEA2025B - TEA2025D
8/9 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications men-
tioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without ex-
press written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore